Rani, Adila, Velusamy, Dhinesh Babu, Marques Mota, Filipe , Jang, Yoon Hee, Kim, Richard Hahnkee, Park, Cheolmin and Kim, Dong Ha (2017) One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices. Advanced Functional Materials, 27 (10). p. 1604604. ISSN 1616-301X
Full content URL: https://doi.org/10.1002/adfm.201604604
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(2017) Adv. Funct. Mater. 27, 1604604.pdf - Whole Document Restricted to Repository staff only 1MB |
Item Type: | Article |
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Item Status: | Live Archive |
Abstract
Nonvolatile resistive random-access memory devices based on graphene-oxide-wrapped gold nanospheres (AuNS@GO) are fabricated following a one-step room-temperature solution-process approach reported herein for the first time. The effect of the thickness of the GO layer (2, 5, and 7 nm) and the size of the synthesized AuNS (15 and 55 nm) are inspected. Reliable bistable switching is observed in the devices made from a flexible substrate and incorporating 5 and 7 nm thick GO-wrapped AuNS, sandwiched between two metal electrodes. Current–voltage measurements show bipolar switching behavior with an ON/OFF ratio of 103 and relatively low operating voltage (−2.5 V). The aforementioned devices unveil remarkable robustness over 100 endurance cycles and a retention of 103 s. Conversely, a 2 nm thick GO layer is shown to be insufficient to allow current passage from the bottom to the top electrodes. The resistive switching mechanism is demonstrated by space charge trapped limited current due to the AuNS in AuNS@GO matrix. The proposed device and methodology herein applied are expected to be attractive candidates for future generation flexible memory devices.
Keywords: | Au-GO Core-Shell, Nonvolatile ReRAM Devices, active layer, resistive random access memory, core-shell nanoparticles |
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Subjects: | F Physical Sciences > F200 Materials Science F Physical Sciences > F110 Applied Chemistry |
Divisions: | College of Science > School of Chemistry |
ID Code: | 53649 |
Deposited On: | 21 Mar 2023 05:36 |
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