Zhao, Y., Li, W., Wang, Z. , Li, Q. and He, Guanjie (2017) Electric field induced slanting growth of silicon nanowires with enhanced hydrophobic property. Materials Letters, 198 . pp. 8-11. ISSN 0167-577X
Full content URL: http://doi.org/10.1016/j.matlet.2017.03.167
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| Item Type: | Article |
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| Item Status: | Live Archive |
Abstract
The etching process of Si nanowires under DC electric field was studied in this work. Interestingly, the growth direction of silicon nanowires became slanting when applied with DC electric intensity of 600 V/m, which greatly influenced the surface wettability ascribed to the variation of surface morphologies. The contact angle of slant Si nanowire was enhanced compared with vertical growth Si nanowire (132.4° vs. 86.8°).
| Additional Information: | cited By 0 |
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| Divisions: | College of Science > School of Chemistry |
| ID Code: | 39450 |
| Deposited On: | 15 Jan 2020 10:21 |
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