Makarovsky, Oleg, Turyanska, Lyudmila, Mori, Nobuya , Greenaway, Mark, Eaves, Laurence, Patané, Amalia, Fromhold, Mark, Lara-Avila, Samuel, Kubatkin, Sergey and Yakimova, Rositsa (2017) Enhancing optoelectronic properties of SiC-grown graphene by a surface layer of colloidal quantum dots. 2D Materials, 4 (3). 031001. ISSN 2053-1583
Full content URL: http://dx.doi.org/10.1088/2053-1583/aa76bb
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__Client_C$_Lyudmila_Papers___ Papers published_pdf_2017_2D_Mater._4_031001_SiC-SLG-QD.pdf - Whole Document Available under License Creative Commons Attribution. 2MB |
| Item Type: | Article |
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| Item Status: | Live Archive |
Abstract
We report a simultaneous increase of carrier concentration, mobility and photoresponsivity when SiC-grown graphene is decorated with a surface layer of colloidal PbS quantum dots, which act as electron donors. The charge on the ionised dots is spatially correlated with defect charges on the
SiC-graphene interface, thus enhancing both electron carrier density and mobility. This chargecorrelation model is supported by Monte Carlo simulations of electron transport and used to explain the unexpected 3-fold increase of mobility with increasing electron density. The enhanced carrier concentration and mobility give rise to Shubnikov-de Haas oscillations in the magnetoresistance, which provide an estimate of the electron cyclotron mass in graphene at high densities and Fermi energies up to 1.2 × 1013 cm−2 and 400 meV, respectively.
| Keywords: | graphene, quantum dots, charge correlation |
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| Subjects: | F Physical Sciences > F200 Materials Science |
| Divisions: | College of Science > School of Chemistry |
| ID Code: | 27684 |
| Deposited On: | 20 Jun 2017 09:27 |
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