Pure and deep-level doped semi-insulating CdTe

James, Ralph B., Hoschl, Pavel, Grill, Roman , Franc, Jan, Belas, Eduard, Turjanska, Lyudmyla, Turkevych, Ivan, Benz, Klaus-Werner and Fiederle, Michael (2001) Pure and deep-level doped semi-insulating CdTe. In: Conference on Hard X-Ray and Gamma-Ray Detector Physics, 29 July 2001, San Diego, CA, USA.

Full content URL: http://dx.doi.org/10.1117/12.450769

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Item Type:Conference or Workshop contribution (Paper)
Item Status:Live Archive


Experimental conditions for a growth of near stoichiometric high resistive CdTe single crystals with a minimized concentration of point defects have to be defined. The position of the stoichiometric line in the pressure-temperature (P-T) phase diagram was evaluated from high-temperature in situ galvanomagntic measurements. Calculations based on a model of two major native defects (Cd vacancy and Cd interstitial) show, that a very small variation of Cd pressure P-Cd results in a strong generation of uncompensated native defects. Modelling of room temperature carrier density in dependence of the deep defect density N-DD, P-Cd, and annealing temperature T shows, that the range of optimal P-Cd, at which the high resistivity can be reached, broadens with increasing N-DD or decreasing T. It is shown, that at low T < 450degreesC the deep defect density < 10(15) cm(-3) is sufficient to grow the high resistive CdTe. CdTe doped with Vanadium is used as a model example.

Keywords:solid-state semiconductor, CdTe, defect structure
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
ID Code:22751
Deposited On:07 Apr 2016 09:40

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