Baumgartner, A., Turyanska, L., Chaggar, A. et al, Patanè, A., Eaves, L. and Henini, M.
(2007)
Sharp electroluminescence lines excited by tunneling injection into a large ensemble of quantum dots.
AIP Conference Proceedings, 893
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pp. 759-760.
ISSN 0094-243X
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Item Type: | Article |
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Item Status: | Live Archive |
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Abstract
We observe a strong bias-dependence of the electroluminescence spectra of an ensemble of self-assembled InAs quantum dots (QDs) excited by tunnelling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. We show that the dot emission evolves from a broad band above flat-band condition to a series of sharp emission lines below a characteristic bias voltage. Also, we present a study of the electroluminescence under resonant bias excitation of the dots and demonstrate up-conversion luminescence. © 2007 American Institute of Physics.
Additional Information: | Conference of 28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference Date: 24 July 2006 Through 28 July 2006 |
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Keywords: | self assembled InAs quantum dots, electroluminescence |
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Subjects: | F Physical Sciences > F300 Physics |
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Divisions: | College of Science > School of Chemistry |
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Related URLs: | |
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ID Code: | 22580 |
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Deposited On: | 07 Apr 2016 18:25 |
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