Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

Henini, M., Ibnez, J., Schmidbauer, M. , Shafi, M., Novikov, S. V., Turyanska, L., Molina, S. I., Sales, D. L., Chisholm, M. F. and Misiewicz, J. (2007) Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates. Applied Physics Letters, 91 (25). ISSN 00036951

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We report the growth by molecular beam epitaxy of Ga Bix As1-x epilayers on (311) B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z -contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311) B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy. © 2007 American Institute of Physics.

Keywords:Epilayers, Imaging techniques, Molecular beam epitaxy, Structural properties, Transmission electron microscopy, X ray diffraction, Band-gap energies, GaBiAs alloy, Optical transmission spectroscopy, Semiconducting gallium compounds
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22579
Deposited On:25 Mar 2016 21:08

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