Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

Balakrishnan, N., Pettinari, G., Makarovsky, O. , Turyanska, Lyudmila, Fay, M. W., De Luca, M., Polimeni, A., Capizzi, M., Martelli, F., Rubini, S. and Patane, A. (2012) Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical Review B - Condensed Matter and Materials Physics, 86 (15). ISSN 1098-0121


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We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable. © 2012 American Physical Society.

Keywords:laser processing, N-H complex
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22516
Deposited On:06 Apr 2016 15:19

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