Semiinsulating CdTe

Grill, R., Franc, J., Hoschl, P. , Belas, E., Turkevych, I., Turjanska, L. and Moravec, P. (2002) Semiinsulating CdTe. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 487 (1-2). pp. 40-46. ISSN 0168-9002

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Experimental conditions for the growth of near stoichiometric high-resistivity CdTe single crystals with a minimal concentration of point defects are investigated. The position of the stoichiometric line in the pressure-temperature (P-T) phase diagram is evaluated from high-temperature in situ galvanomagnetic measurements. Calculations based on a model of two major native defects (Cd vacancy and Cd interstitial) show, that a very small variation of Cd pressure P(Cd) results in a strong generation of uncompensated native defects. Modelling of room temperature carrier density dependence on the deep defect density NDD, PCd, and annealing temperature T shows, that the range of optimal PCd, at which high resistivity can be reached, broadens with increasing NDD or decreasing T. It is shown that at low T <450°C the deep defect density < 1015 cm-3 is sufficient to grow the high-resistivity CdTe. © 2002 Elsevier Science B.V. All rights reserved.

Additional Information:Conference of 3rd International Workshop on Radiation Imaging Detectors ; Conference Date: 23 September 2001 Through 27 September 2001
Keywords:Annealing, Carrier concentration, High temperature effects, Phase diagrams, Point defects, Semiconducting cadmium telluride, Deep defect density, Single crystals
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22500
Deposited On:25 Mar 2016 21:43

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