Grill, R., Turjanska, L., Franc, J. , Belas, E., Turkevych, I. and Hoschl, P. (2002) Chemical self-diffusion in CdTe. Physica Status Solidi (B) Basic Research, 229 (1). pp. 161-164. ISSN 0370-1972
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Item Type: | Article |
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Item Status: | Live Archive |
Abstract
High-temperature in-situ galvanomagnetic measurements on CdTe are performed at temperatures T = 500-700 °C in the interval of Cd pressures (PCd) one order of magnitude below and above the ideal stoichiometry line. The time evolution of samples after step-like change of PCd is analyzed and the chemical diffusion coefficient D = 5 exp (-1.12eV/kBT) (cm2/s) is evaluated. Neither magnitude of PGa nor direction of the step of PCd (increased/decreased) have manifested a distinguishable effect on D. Surface conduction below 600 °C dependent on PCd is reported.
Keywords: | Semiconductors, CdTe, self-diffusion |
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Subjects: | F Physical Sciences > F300 Physics |
Divisions: | College of Science > School of Chemistry |
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ID Code: | 22499 |
Deposited On: | 07 Apr 2016 18:11 |
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