Activation of electrically silent defects in the high-k gate stacks

Veksler, D., Bersuker, G., Watkins, Matthew and Shluger, A. (2014) Activation of electrically silent defects in the high-k gate stacks. In: 52nd IEEE International Reliability Physics Symposium (IRPS 2014), 1-5 June 2014, Waikoloa, HI, USA.

Activation of electrically silent defects in the high-k gate stacks

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We investigate a possibility that changes of electrical characteristics of the nFETs high-k gate stacks under moderate voltage stresses are induced primarily by a reversible activation of the pre-existing defects rather than generation of new structural defects. These electrically silent pre-cursor defects become responsible for measured stress-induced instabilities of transistor parameters after activation. It is demonstrated that the experimental stress time dependency of the threshold voltage, leakage current, charge pumping (CP) current can be reproduced, considering trap activation/deactivation as a multi-phonon assisted electron capture/emission. Ab initio simulations, employed to identify the atomic configuration of these pre-cursor defects, point to the oxygen vacancies in a region of the SiO2 interfacial layer adjacent to the HfO2 film as potential candidates. © 2014 IEEE.

Keywords:Chemical activation, Hafnium oxides, Logic gates, Activation/deactivation, Charge pumping, Electrical characteristic, High-K gate stacks, PBTI, SILC, Stress-induced instabilities, Transistor parameters, Defects
Subjects:H Engineering > H600 Electronic and Electrical Engineering
F Physical Sciences > F310 Applied Physics
Divisions:College of Science > School of Mathematics and Physics
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ID Code:17696
Deposited On:28 Aug 2015 09:00

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