Gallagher, Hugh G., Vrcelj, Ranko M. and Sherwood, John N. (2003) The crystal growth and perfection of 2,4,6-trinitrotoluene. Journal of Crystal Growth, 250 (3-4). pp. 486-498. ISSN 0022-0248
Full content URL: http://dx.doi.org/10.1016/S0022-0248(02)02394-1
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Item Type: | Article |
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Item Status: | Live Archive |
Abstract
Large crystals of TNT were grown from ethyl acetate solution by both temperature lowering and solvent
evaporation. The perfection of crystals grown from seeds under carefully controlled conditions was generally higher
than those prepared by uncontrolled solvent evaporation. Examination by X-ray topography revealed the crystals to
have a characteristic growth induced defect structure comprising growth sectors and boundaries, growth banding,
solvent inclusions and dislocations. Twins and stacking faults (SF) were also observed. Many of the defects noted in the
topographs can be attributed to impurities. The influence of the highly anisotropic crystal structure on the nature of
growth defects is discussed. A structural model proposed to explain twinning and SF formation is partially supported
by topographic evidence.
Keywords: | X-ray topography, Organic compounds, TNT |
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Subjects: | F Physical Sciences > F130 Structural Chemistry |
Divisions: | College of Science > School of Pharmacy |
ID Code: | 16739 |
Deposited On: | 18 Feb 2015 11:22 |
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