Radiation hardness of a large area CMOS active pixel sensor for bio-medical application

Esposito, Michela, Anaxagoras, Thalis, Diaz, O. , Wells, K. and Allinson, Nigel M. (2012) Radiation hardness of a large area CMOS active pixel sensor for bio-medical application. In: Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE, Oct. 27 2012-Nov. 3 2012, Anaheim, CA.

Full content URL: http://dx.doi.org/10.1109/NSSMIC.2012.6551318

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Item Type:Conference or Workshop contribution (Paper)
Item Status:Live Archive


A wafer scale CMOS Active Pixel Sensor has been designed employing design techniques of transistor enclosed geometry and P+ doped guard rings to offer ionizing radiation tolerance. The detector was irradiated with 160 kVp X-rays up to a total dose of 94 kGy(Si) and remained functional. The radiation damage produced in the device has been studied, resulting in a dark current density increase per decade of 96±5 pA/cm2/decade and a damage threshold of 204 Gy(Si). The damage produced in the detector has been compared with a commercially available CMOS APS, showing a radiation tolerance about 100 times higher. Moreover Monte Carlo simulations have been performed to evaluate primary and secondary energy deposition in each of the detector stages. © 2012 IEEE.

Additional Information:Conference Code:98448
Keywords:CMOS, Wafer scale
Subjects:F Physical Sciences > F350 Medical Physics
Divisions:College of Science > School of Engineering
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ID Code:11734
Deposited On:13 Dec 2013 15:11

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