Characterizing Defects Responsible for Charge Transport Characteristics at Interfaces of Nano-Thick Materials Stacks

Bersuker, Gennadi, Watkins, Matthew B. and Shluger, Alexander L. (2016) Characterizing Defects Responsible for Charge Transport Characteristics at Interfaces of Nano-Thick Materials Stacks. In: Oxide materials at the two-dimensional limit. Springer Series in Materials Science, pp. 311-333. ISBN 9783319283302, 9783319283326

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Item Type:Book Section
Item Status:Live Archive

Abstract

Major functioning blocks in modern devices employed in a variety of applications (electronics, energy harvesting, sensors, etc.) comprise of stacks of nm-thin layers of dielectric materials in contact with conductive electrodes (semiconductors, metals). The performance and reliability of these devices are affected by charge transfer characteristics of these multilayer stacks. We discuss collaboration between electrical measurements and computational modeling leading to identification of defects responsible for degradation phenomena in nm-thin dielectric films employed as gate dielectrics in metal oxide field effect transistors.

Keywords:Semiconductors, Materials, Solid state
Subjects:F Physical Sciences > F200 Materials Science
J Technologies > J510 Materials Technology
Divisions:College of Science > School of Chemistry
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ID Code:27908
Deposited On:01 Aug 2017 12:16

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