Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition

Ullah, Mahtab, Ahmed, Ejaz, Elhissi, Abdelbary and Ahmed, Waqar (2014) Low resistance polycrystalline diamond thin films deposited by hot filament chemical vapour deposition. Bulletin of Materials Science, 37 (3). pp. 579-583. ISSN 0250-4707

Full content URL: https://link.springer.com/article/10.1007/s12034-0...

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Abstract

Polycrystalline diamond thin films with outgrowing diamond (OGD) grains were deposited onto silicon wafers using a hydrocarbon gas (CH4) highly diluted with H2 at low pressure in a hot filament chemical vapour deposition (HFCVD) reactor with a range of gas flow rates. X-ray diffraction (XRD) and SEM showed polycrystalline diamond structure with a random orientation. Polycrystalline diamond films with various textures were grown and (111) facets were dominant with sharp grain boundaries. Outgrowth was observed in flowerish character at high gas flow rates. Isolated single crystals with little openings appeared at various stages at low gas flow rates. Thus, changing gas flow rates had a beneficial influence on the grain size, growth rate and electrical resistivity. CVD diamond films gave an excellent performance for medium film thickness with relatively low electrical resistivity and making them potentially useful in many industrial applications. © Indian Academy of Sciences.

Keywords:Chemical vapor deposition, Crystal growth, Electric conductivity, Flow of gases, Flow rate, Grain boundaries, Grain size and shape, Industrial applications, Silicon wafers, Thin films, Vapors, X ray diffraction, Carbon material, Chemical vapour deposition, Grain size, High gas flow rates, Polycrystalline diamond films, Polycrystalline diamond thin films, Polycrystalline diamonds, Random orientations, Diamond films
Subjects:F Physical Sciences > F200 Materials Science
Divisions:College of Science > School of Mathematics and Physics
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ID Code:27132
Deposited On:08 Sep 2017 10:07

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