Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers

Turyanska, L., Baumgartner, A., Chaggar, A., Patane, A., Eaves, L. and Henini, M. (2006) Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers. Applied Physics Letters, 89 (9). ISSN 0003-6951

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Abstract

We report sharp electroluminescence lines from individual self-assembled InAs quantum dots (QDs) excited by resonant tunneling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. Bias-tunable tunneling of carriers into the dots provides a means of controlling injection and light emission from a small number of individual dots within a large ensemble. We also show that the extent of carrier energy relaxation prior to recombination can be controlled by tailoring the morphology of the QD layer. © 2006 American Institute of Physics.

Keywords:Electroluminescence, Light emission, Morphology, Resonant tunneling, Self assembly, Semiconducting gallium arsenide, Semiconducting indium compounds, Semiconductor diodes, Semiconductor doping, Carrier energy relaxation, InAs quantum dots, P-doped GaAs layers, p-i-n diode, Semiconductor quantum dots
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22582
Deposited On:25 Mar 2016 21:13

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