Sharp electroluminescence lines excited by tunneling injection into a large ensemble of quantum dots

Baumgartner, A., Turyanska, L., Chaggar, A. , Patanè, A., Eaves, L. and Henini, M. (2007) Sharp electroluminescence lines excited by tunneling injection into a large ensemble of quantum dots. AIP Conference Proceedings, 893 . pp. 759-760. ISSN 0094-243X

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Abstract

We observe a strong bias-dependence of the electroluminescence spectra of an ensemble of self-assembled InAs quantum dots (QDs) excited by tunnelling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. We show that the dot emission evolves from a broad band above flat-band condition to a series of sharp emission lines below a characteristic bias voltage. Also, we present a study of the electroluminescence under resonant bias excitation of the dots and demonstrate up-conversion luminescence. © 2007 American Institute of Physics.

Additional Information:Conference of 28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference Date: 24 July 2006 Through 28 July 2006
Keywords:self assembled InAs quantum dots, electroluminescence
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22580
Deposited On:07 Apr 2016 18:25

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