Hole trapping at hydrogenic defects in amorphous silicon dioxide

El-Sayed, Al-Moatasem, Watkins, Matthew B., Grasser, Tibor , Afanas'ev, Valeri V. and Shluger, Alexander L. (2015) Hole trapping at hydrogenic defects in amorphous silicon dioxide. Microelectronic Engineering, 147 . pp. 141-144. ISSN 0167-9317

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Abstract

We used ab initio calculations to investigate the hole trapping reactions at a neutral defect generated in amorphous silicon dioxide networks by the interaction of strained Si-O bonds with atomic hydrogen, a so-called hydroxyl E' center. It was found that the hole trapping at this defect leads to two distinct charged configurations. The first one consists of an H atom bound to a bridging O in a hydronium-like configuration. The second configuration involves relaxation of a Si atom through the plane of its oxygen neighbors facilitated by a weak interaction with a 2-coordinated O atom. The distribution of total energy differences between these two configurations calculated for a number of amorphous network models has a width of about 1.0 eV. These hole trapping reactions are discussed in the context of Si complementary metal-oxide-semiconductor device reliability issues. © 2015 Published by Elsevier B.V.

Keywords:Atoms, Calculations, Defects, Hole traps, Hydrogen bonds, MOS devices, Point defects, Semiconducting silicon, Semiconductor devices, Silica, Silicon, Silicon oxides, Ab initio calculations, Amorphous networks, Complementary metal-oxide semiconductor devices, Device reliability, DFT, Hydroxyl E' center, Positively charged, Total energy differences, Amorphous silicon, JCNotOpen
Subjects:H Engineering > H611 Microelectronic Engineering
Divisions:College of Science > School of Mathematics and Physics
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ID Code:17690
Deposited On:08 Apr 2016 10:34

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