Abstract

Presence of high defect rate in nanofabrics due to the inadequate fabrication processes has held back the development of emerging technology architecture. In this work, we propose two repair techniques to provide high level of defect tolerance in lookup table (LUT) based Boolean logic approach implemented in nano/CMOS. Further, we demonstrate that direct application of memory repair techniques is ineffective in dealing with high defect rate in hybrid nano/CMOS architecture. We show that the proposed techniques are capable of handling more than 20 defect rate in hybrid nano/CMOS architecture with efficient utilization of spare units.