Anaxagoras, Thalis and Kent, Paul and Allinson, Nigel and Turchetta, Renato and Pickering, Tim and Maneuski, Dzmitry and Blue, Andrew and O'Shea, Val (2010) eLeNA: a parametric CMOS active-pixel sensor for the evaluation of reset noise reduction architectures. IEEE Transactions on Electron Devices, 57 (9). 2163-2175 . ISSN 0018-9383
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Abstract
We present a novel complementary metal-oxide-semiconductor (CMOS) active-pixel sensor imager that incorporates different reset schemes to achieve lower reset noise levels. The sensor, eLeNA, features a 448 × 512 array with a pixel pitch of 15 μm, fabricated using a 0.18- μm CMOS process. Fourteen sections and five different reset methods were employed. Without using pinned diodes, we implanted structures for correlated double sampling. A noise of 6 e- is measured with a conversion gain of 49 μV/e-. We will discuss various applications for the reset method that achieved the best overall performance, considering leakage current and read noise.
| Item Type: | Article |
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| Keywords: | CMOS image sensors, CMOS process, Gain measurement, Noise level, Noise measurement, Noise reduction, Sampling methods, Sensor arrays, Sensor phenomena and characterization, ref15, refdoi |
| Subjects: | H Engineering > H611 Microelectronic Engineering |
| Divisions: | College of Sciences > Faculty of Science > Lincoln School of Computer Science |
| Depositing User: | Nigel Allinson |
| Date Deposited: | 15 Sep 2012 21:24 |
| Last Modified: | 05 Jun 2013 14:48 |
| URI: | http://eprints.lincoln.ac.uk/id/eprint/6145 |
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