A describing function for resonantly commutated H-bridge inverters

Sewell, H I and Stone , D A and Bingham, Chris (2004) A describing function for resonantly commutated H-bridge inverters. IEEE TRANSACTIONS ON POWER ELECTRONICS, 19 (4). pp. 1010-1021. ISSN 0885-8993

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A describing function for resonantly commutated H-bridge inverters
Abstract—The paper presents the derivation of a describing function to model the dynamic behavior of a metal oxide semiconductor field effect transistor-based, capacitively commutated H-bridge, including a comprehensive explanation of the various stages in the switching cycle. Expressions to model the resulting input current, are also given. The derived model allows the inverter to be accurately modeled within a control system simulation over a number of utility input voltage cycles, without resorting to computationally intensive switching-cycle level, time-domain SPICE simulations. Experimental measurements from a prototype H-bridge inverter employed in an induction heating application, are used to demonstrate a high degree of prediction accuracy over a large variation of load conditions is possible using the simplified model.
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Official URL: http://dx.doi.org/10.1109/TPEL.2004.830081

Abstract

Abstract—The paper presents the derivation of a describing function to model the dynamic behavior of a metal oxide semiconductor field effect transistor-based, capacitively commutated H-bridge, including a comprehensive explanation of the various stages in the switching cycle. Expressions to model the resulting input current, are also given. The derived model allows the inverter to be accurately modeled within a control system simulation over a number of utility input voltage cycles, without resorting to computationally
intensive switching-cycle level, time-domain SPICE simulations. Experimental measurements from a prototype H-bridge inverter employed in an induction heating application, are used to demonstrate a high degree of prediction accuracy over a large variation of load conditions is possible using the simplified model.

Item Type:Article
Additional Information:Abstract—The paper presents the derivation of a describing function to model the dynamic behavior of a metal oxide semiconductor field effect transistor-based, capacitively commutated H-bridge, including a comprehensive explanation of the various stages in the switching cycle. Expressions to model the resulting input current, are also given. The derived model allows the inverter to be accurately modeled within a control system simulation over a number of utility input voltage cycles, without resorting to computationally intensive switching-cycle level, time-domain SPICE simulations. Experimental measurements from a prototype H-bridge inverter employed in an induction heating application, are used to demonstrate a high degree of prediction accuracy over a large variation of load conditions is possible using the simplified model.
Keywords:MOSFET, describing function, Power electronic energy converters
Subjects:H Engineering > H610 Electronic Engineering
Divisions:College of Science > School of Engineering
ID Code:2354
Deposited By:INVALID USER
Deposited On:25 Apr 2010 21:26
Last Modified:28 Aug 2014 09:24

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