Nonlinear hole transport through a submicron-size channel

Makarovsky, O. and Neumann, A. and Martin, A. M. and Turyanska, L. and Patanè, A. and Eaves, L. and Henini, M. and Main, P. C. and Thoms, S. and Wilkinson, C. D. W. and Maude, D. K. and Portal, J. C. (2003) Nonlinear hole transport through a submicron-size channel. Applied Physics Letters, 82 (6). pp. 925-927. ISSN 0003-6951

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Abstract

Non linear hole transport through a submicron-size channel was investigated. The channel was fabricated from a modulation-doped p-type GaAs/(AlGa)As single-quantum-well heterostructure. It was showed that the holes can be accelerated beyond the inflection point of the lowest energy subband dispersion curve by the intense electric field in the channel.

Keywords:Band structure, Electric field effects, Electric potential, Heterojunctions, Semiconductor doping, Semiconductor quantum wells, Hole transport, Semiconducting gallium arsenide
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22585
Deposited On:25 Mar 2016 21:10

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