The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well

Morozova, E.N. and Makarovskiy, O.N. and Volkov, V.A. and Dubrovskiy, Yu.V. and Turyanska, L. and Vdovin, E.E. and Patané, A. and Eaves, L. and Henini, M. (2005) The resonant tunneling of holes through double-barrier structures with InAs QDs at the center of a GaAs quantum well. Semiconductors, 39 (5). pp. 543-546. ISSN 1063-7826

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Abstract

The effect of InAs quantum dots (QDs) grown in the center of a GaAs quantum well on the tunneling characteristics of resonant-tunneling diodes based on p-AlAs/GaAs/AlAs heterostructures is studied. The introduction of QDs results in a shift and broadening of resonance peaks in the current-voltage characteristics of the diodes; however, this effect is found to be strongly dependent on the number of the 2D subband involved in the tunneling. The obtained dependence is attributed to origination of the fluctuation potential in the vicinity of the QD layer. © 2005 Pleiades Publishing, Inc.

Keywords:self assembled InAs quantum dots, resonant-tunneling diode
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22584
Deposited On:07 Apr 2016 16:10

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