Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers

Turyanska, L. and Baumgartner, A. and Chaggar, A. and Patane, A. and Eaves, L. and Henini, M. (2006) Sharp-line electroluminescence from individual quantum dots by resonant tunneling injection of carriers. Applied Physics Letters, 89 (9). ISSN 0003-6951

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Abstract

We report sharp electroluminescence lines from individual self-assembled InAs quantum dots (QDs) excited by resonant tunneling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. Bias-tunable tunneling of carriers into the dots provides a means of controlling injection and light emission from a small number of individual dots within a large ensemble. We also show that the extent of carrier energy relaxation prior to recombination can be controlled by tailoring the morphology of the QD layer. © 2006 American Institute of Physics.

Keywords:Electroluminescence, Light emission, Morphology, Resonant tunneling, Self assembly, Semiconducting gallium arsenide, Semiconducting indium compounds, Semiconductor diodes, Semiconductor doping, Carrier energy relaxation, InAs quantum dots, P-doped GaAs layers, p-i-n diode, Semiconductor quantum dots
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22582
Deposited On:25 Mar 2016 21:13

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