Sharp electroluminescence lines excited by tunneling injection into a large ensemble of quantum dots

Baumgartner, A. and Turyanska, L. and Chaggar, A. and Patanè, A. and Eaves, L. and Henini, M. (2007) Sharp electroluminescence lines excited by tunneling injection into a large ensemble of quantum dots. AIP Conference Proceedings, 893 . pp. 759-760. ISSN 0094-243X

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Abstract

We observe a strong bias-dependence of the electroluminescence spectra of an ensemble of self-assembled InAs quantum dots (QDs) excited by tunnelling injection of carriers from the n- and p-doped GaAs layers of a p-i-n diode. We show that the dot emission evolves from a broad band above flat-band condition to a series of sharp emission lines below a characteristic bias voltage. Also, we present a study of the electroluminescence under resonant bias excitation of the dots and demonstrate up-conversion luminescence. © 2007 American Institute of Physics.

Additional Information:Conference of 28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference Date: 24 July 2006 Through 28 July 2006
Keywords:self assembled InAs quantum dots, electroluminescence
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22580
Deposited On:07 Apr 2016 18:25

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