Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates

Henini, M. and Ibnez, J. and Schmidbauer, M. and Shafi, M. and Novikov, S. V. and Turyanska, L. and Molina, S. I. and Sales, D. L. and Chisholm, M. F. and Misiewicz, J. (2007) Molecular beam epitaxy of GaBiAs on (311) B GaAs substrates. Applied Physics Letters, 91 (25). ISSN 00036951

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Abstract

We report the growth by molecular beam epitaxy of Ga Bix As1-x epilayers on (311) B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z -contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311) B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy. © 2007 American Institute of Physics.

Keywords:Epilayers, Imaging techniques, Molecular beam epitaxy, Structural properties, Transmission electron microscopy, X ray diffraction, Band-gap energies, GaBiAs alloy, Optical transmission spectroscopy, Semiconducting gallium compounds
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22579
Deposited On:25 Mar 2016 21:08

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