Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers

Rodrigo, J. F. and Sales, D. L. and Shafi, M. and Henini, M. and Turyanska, Lyudmila and Novikov, S. and Molina, S. I. (2010) Effect of annealing on the structural and optical properties of (3 1 1)B GaAsBi layers. Applied Surface Science, 256 (18). pp. 5688-5690. ISSN 0169-4332

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Abstract

The influence of post-growth annealing on the microstructure and photoluminescence (PL) of GaAsBi alloys grown on (3 1 1)B GaAs is analyzed. Conventional transmission electron microscopy (TEM) performed on as-grown samples evidence the presence of structural defects and a mosaic structure in the GaAsBi layer. A sequence of stacking faults at regions close to the GaAs/GaAsBi interface are observed in high resolution TEM images. After annealing at 473 K during 3 h the mosaic structure disappears, the presence of defects is reduced and the PL peak intensely enhances. © 2010 Elsevier B.V. All rights reserved.

Additional Information:Progress in Applied Surface, Interface and Thin Film Science - SURFINT SREN II
Keywords:As-grown, Conventional transmission electron microscopies, GaAs, High-resolution TEM, Molecular Beam Epitaxy Photoluminescence, Mosaic structure, Postgrowth annealing, Semiconductor compounds, Structural and optical properties, Structural defect, TEM, Annealing, Crystal growth, Defects, Gallium alloys, Molecular beam epitaxy, Molecular beams, Optical properties, Photoluminescence, Semiconductor growth, Semiconductor materials, Stacking faults, Transmission electron microscopy, Scanning electron microscopy
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22524
Deposited On:06 Apr 2016 15:47

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