Band-gap profiling by laser writing of hydrogen-containing III-N-Vs

Balakrishnan, N. and Pettinari, G. and Makarovsky, O. and Turyanska, Lyudmila and Fay, M. W. and De Luca, M. and Polimeni, A. and Capizzi, M. and Martelli, F. and Rubini, S. and Patane, A. (2012) Band-gap profiling by laser writing of hydrogen-containing III-N-Vs. Physical Review B - Condensed Matter and Materials Physics, 86 (15). ISSN 1098-0121


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We show that the dissociation of the N-H complex in hydrogenated III-N-Vs can be laser activated at temperatures that are significantly smaller than those (>200°C) required for thermal dissociation due to a resonant photon absorption by the N-H complex. This phenomenon provides a mechanism for profiling the band-gap energy in the growth plane of the III-N-Vs with submicron spatial resolution and high energy accuracy; the profiles are erasable and the alloys can be rehydrogenated making any nanoscale in-plane band-gap profile rewritable. © 2012 American Physical Society.

Keywords:laser processing, N-H complex
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22516
Deposited On:06 Apr 2016 15:19

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