High temperature mobility of CdTe

Franc, J. and Grill, R. and Turjanska, L. and Hoschl, P. and Belas, E. and Moravec, P. (2001) High temperature mobility of CdTe. Journal of Applied Physics, 89 (1). pp. 786-788. ISSN 0021-8979

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Abstract

The Hall mobility of electrons μH is measured in CdTe in the temperature interval 450-1050°C and defined Cd overpressure in near-intrinsic conditions. The strong decrease of μH above 600°C is reported. The effect is explained within a model of multivalley conduction where both electrons in �1c minimum and in L1c minima participate. The theoretical description is based on the solution of the Boltzmann transport equation within the relaxation time approximation including the polar and acoustic phonon intravalley and intervalley scatterings. The �1c to L1c separation �E=0.29 - 10-4T (eV) for the effective mass in the L valley mL=0.35m0 is found to best fit the experimental data. Such �E is about four times smaller than it is predicted by first-principle calculations. © 2001 American Institute of Physics.

Keywords:solid-state semiconductor, CdTe, electronic properties
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22504
Deposited On:07 Apr 2016 08:51

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