Defect structure of CdZnTe

Turjanska, L. and Hoschl, P. and Belas, E. and Grill, R. and Franc, J. and Moravec, P. (2001) Defect structure of CdZnTe. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 458 (1-2). pp. 90-95. ISSN 0168-9002

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Abstract

(Cd,Zn)Te single crystals fabricated in our laboratory by Vertical Gradient Freeze Method were subjected to two types of experiments. In the first experiment, samples were annealed at temperatures 600-900 °C under different Cd overpressures. They were quenched after annealing to room temperature and Hall effect and conductivity measurements were performed. In the second experiment, in situ Hall effect and conductivity measurements on neighbor samples were done also at temperatures 700-900 °C. We determined equilibrium concentrations of defects at temperatures 700-900 °C and the stoichiometry intrinsic line in the p-T diagram comparing the experiments and the theoretical model presented by Berding. Results of the presented analysis can be used to find optimal growth and annealing conditions to reduce precipitation of Cd/Te or to produce intrinsic material suitable for fabrication of (CdZn)Te gamma-ray detectors.

Additional Information:Proc. 11th Inbt. Workshop on Room Temperature Semiconductor X- and Gamma-Ray Detectors and Associated Electronics
Keywords:Annealing, Crystal defects, Electric conductivity of solids, Gamma rays, Hall effect, Mathematical models, Precipitation (chemical), Quenching, Semiconducting cadmium telluride, Single crystals, Stoichiometry, Cadmium zinc telluride, Vertical gradient freeze method, Particle detectors
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22503
Deposited On:25 Mar 2016 21:43

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