Semiinsulating CdTe

Grill, R. and Franc, J. and Hoschl, P. and Belas, E. and Turkevych, I. and Turjanska, L. and Moravec, P. (2002) Semiinsulating CdTe. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 487 (1-2). pp. 40-46. ISSN 0168-9002

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Abstract

Experimental conditions for the growth of near stoichiometric high-resistivity CdTe single crystals with a minimal concentration of point defects are investigated. The position of the stoichiometric line in the pressure-temperature (P-T) phase diagram is evaluated from high-temperature in situ galvanomagnetic measurements. Calculations based on a model of two major native defects (Cd vacancy and Cd interstitial) show, that a very small variation of Cd pressure P(Cd) results in a strong generation of uncompensated native defects. Modelling of room temperature carrier density dependence on the deep defect density NDD, PCd, and annealing temperature T shows, that the range of optimal PCd, at which high resistivity can be reached, broadens with increasing NDD or decreasing T. It is shown that at low T <450°C the deep defect density < 1015 cm-3 is sufficient to grow the high-resistivity CdTe. © 2002 Elsevier Science B.V. All rights reserved.

Additional Information:Conference of 3rd International Workshop on Radiation Imaging Detectors ; Conference Date: 23 September 2001 Through 27 September 2001
Keywords:Annealing, Carrier concentration, High temperature effects, Phase diagrams, Point defects, Semiconducting cadmium telluride, Deep defect density, Single crystals
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22500
Deposited On:25 Mar 2016 21:43

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