Chemical self-diffusion in CdTe

Grill, R. and Turjanska, L. and Franc, J. and Belas, E. and Turkevych, I. and Hoschl, P. (2002) Chemical self-diffusion in CdTe. Physica Status Solidi (B) Basic Research, 229 (1). pp. 161-164. ISSN 0370-1972

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Abstract

High-temperature in-situ galvanomagnetic measurements on CdTe are performed at temperatures T = 500-700 °C in the interval of Cd pressures (PCd) one order of magnitude below and above the ideal stoichiometry line. The time evolution of samples after step-like change of PCd is analyzed and the chemical diffusion coefficient D = 5 exp (-1.12eV/kBT) (cm2/s) is evaluated. Neither magnitude of PGa nor direction of the step of PCd (increased/decreased) have manifested a distinguishable effect on D. Surface conduction below 600 °C dependent on PCd is reported.

Keywords:Semiconductors, CdTe, self-diffusion
Subjects:F Physical Sciences > F300 Physics
Divisions:College of Science > School of Chemistry
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ID Code:22499
Deposited On:07 Apr 2016 18:11

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